Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)

نویسندگان

چکیده

The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all necessary equations are detailed and coupled. This proposed by finite element method using Comsol multiphysics software, allowed to behaviour transistor observe different degradations in structure component. Then, an optimization is avoid failures transistor. In this work, we have used Covariance Matrix Adaptation-Evolution Strategy (CMA-ES) solve problem, but it requires a very important computing time. Therefore, kriging assisted CMA-ES (KA-CMA-ES), integration metamodel method, allows us problem overcome constraint calculation All these methods well paper. coupling model developed on Multiphysics KA-CMA-ES Matlab optimize transistors. We made comparison between results numerical simulations initial state optimal It was found that efficient solving problems.

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ژورنال

عنوان ژورنال: International Journal for Simulation and Multidisciplinary Design Optimization

سال: 2022

ISSN: ['1779-627X', '1779-6288']

DOI: https://doi.org/10.1051/smdo/2021035